Infineon ISZ0703NLSATMA1の詳細は販売業者から提供されます。
Mosfet, N-Ch, 60V, 56A, Tsdson Rohs Compliant: Yes |Infineon Technologies ISZ0703NLSATMA1
Power MOSFET, N Channel, 60 V, 56 A, 0.0064 ohm, TSDSON, Surface Mount
MOSFET Devices; INFINEON; ISZ0703NLSATMA1; 60 V; 56 A; 20 V; 2.5 W
Infineon NMOS OptiMOS 5, Vds=60 V, 56 A, PQFN 3 x 3, , 8
60V, 56A, 7.3MOHM, N-CHANNEL, PQFN 3.3 x 3.3
Power Field-Effect Transistor, 56A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 60V, 56A, TSDSON;
MOSFET, N-CH, 60V, 56A, TSDSON;
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.