Infineon ISC240P06LMATMA1

Power MOSFET, P Channel, 60 V, 59 A, 24 Milliohms, TDSON, 8 Pins, Surface Mount

P-Ch MOSFET 60V 24mΩ@40A,10V 59A 136nC@10V 4.4nF@30V SMD

Trans MOSFET P-CH 60V 59A 8-Pin TDSON EP T/R

Power Field-Effect Transistor, 59A I(D), 60V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon ISC240P06LMATMA1 MOSFET

OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.