Infineon IRS2118SPBF

600 V single high-side gate driver IC with single input, SOIC 8N, RoHS

Tube IRS2118SPBF High-Side 1996 gate driver 130ns -40C~150C TJ 290mA 600mA 625mW

Power MOSFET and IGBT Driver, Single Channel/Hi Side, 600V, 8-pin SOIC, Tube

IRS2118 Series 600 V 290 mA 20 V Supply Single High Side Driver - SOIC-8N

Single High Side Driver, Noninverting Input. IN Voltage Threshold 9.5V & 6.0V

Gate Drivers The factory is currently not accepting orders for this product

Driver 600V 1-OUT High Side/Low Side Inv 8-Pin SOIC N Tube

HIGH SIDE DRIVER, INVERT INPUT, SMD; Device Type:IGBT / MOSFET; Module Configuration:High Side; Peak Output Current:600mA; Input Delay:125ns; Output Delay:105ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (20-Jun-2011); Base Number:2118; No. of Outputs:1; Output Sink Current:600mA; Output Source Current Max:290mA; Output Voltage:620V; Package / Case:SOIC; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD

600 V High Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout; CMOS Schmitt-triggered inputs with pull-down; Outputs out of phase with inputs (IRS2118); Outputs in phase with inputs (IRS2117 and IRS21171 )