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Tube IRS2109PBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 290mA 600mA 1W
600 V half-bridge gate driver IC with shutdown, PDIP8, RoHS
Infineon SCT
100ns 2 10V 950ns 20V 800mV,2.5V Non-Inverting IGBT,MOSFET,N 35ns 290mA,600mA PDIP-8 5.33mm
HALF-BRIDGE DRIVER Half Bridge Based Peripheral Driver, CMOS, PDIP8
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin PDIP, Tube
MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin PDIP Tube
IRS2109 Series 600 V 209 mA 20 V Supply Dual Half Bridge Driver - PDIP-8
Gate Drivers The factory is currently not accepting orders for this product
Half Bridge 290mA 10V~20V 600mA PDIP-8 Gate Drive ICs ROHS
IC, MOSFET DRIVER HALF-BRIDGE 8DIP; Device Type:MOSFET; Module Configuration:High Side; Peak Output Current:600mA; Input Delay:750ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2109; No. of Outputs:1; Offset Voltage:600V; Output Current:120mA; Output Current + Max:120mA; Output Current - Max:250mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1000mW; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole
600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, 14 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High-side output in phase with HIN input; Logic and power ground +/- 5 V offset; Internal 540 ns deadtime; Lower di/dt gate driver for better noise immunity; Shutdown input turns off both channels