サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusObsolete (Last Updated: 7 months ago)
関連部品
InfineonIRLR8721TRPBF
MOSFET N-CH 30V 65A DPAK N-Channel 30 V 65A (Tc) 65W (Tc) Surface Mount TO-252AA (DPAK)
Diodes Inc.DMN3010LK3-13
Power MOSFET, N Channel, 30 V, 43 A, 0.008 ohm, TO-252 (DPAK), Surface Mount
説明
Infineon IRLR8729PBFの詳細は販売業者から提供されます。
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
MOSFET, N-CH 30V 58A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Id Max:58A; Package / Case:D-PAK; Power Dissipation Pd:55W; Power Dissipation Pd:55W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance8.9 mΩ
Package Quantity3000
Power Dissipation55 W
Rds On Max8.9 mΩ
Recovery Time24 ns
Resistance8.9 MΩ
Rise Time47 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time10 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm