サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
Infineon IRLR4343PBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 42 Milliohms;ID 26A;D-Pak (TO-252AA);PD 79W
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET N-CH 55V 26A 3-Pin (2+Tab) DPAK
Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
DIGITAL AUDIO HEXFET 55V N-CH D-PAK (TO-252AA)
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:26A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)26 A
Current Rating26 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time5.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance740 pF
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage55 V
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation79 W
Rds On Max50 mΩ
Rise Time19 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time5.7 ns
Voltage Rating (DC)55 V
Dimensions
Height2.2606 mm
Length6.7056 mm
Width6.22 mm