Infineon IRLR2705TRPBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
Transistor: N-MOSFET; unipolar; 55V; 28A; 0.04ohm; 68W; -55+175 deg.C; SMD; TO252AA(DPAK)
Single N-Channel 55 V 40 mOhm 25 nC HEXFET® Power Mosfet - TO-252-3
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 55 V, 28 A, 0.04 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.