Infineon IRLL2705PBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 3.8A;SOT-223;PD 1W;VGS +/-16V;-55

Single N-Channel 55 V 0.04 Ohm 32 nC HEXFET® Power Mosfet - SOT-223-3

MOSFET N-CH 55V 3.8A SOT223 N-Channel 55 V 3.8A (Ta) 1W (Ta) Surface Mount SOT-223

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

N-Ch MOSFET 55V 3.8A 40mΩ@3.8A,10V 870pF@25V SOT-223 SMD 1.8mm H

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 Pb free

Power Field-Effect Transistor, 3.8A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:3.8A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes

MOSFET, N, 55V, 3.8A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:55V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.8A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:30A; SMD Marking:LL2705; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V