価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRL7833STRRPBF | 0 | 800 | Bulk | 2h | |||||||
| Component Stockers USA | IRL7833STRRPBF | 20,561 | >1wk | |||||||||
| Win Source | WS-IRL7833STRRPBF | 2,270 | 1 | 13h | ||||||||
| Worldway Electronics | IRL7833STRRPBF | 10,457 | 7 | Tape & Reel | 13h | |||||||
| SHENGYU ELECTRONICS | IRL7833STRRPBF | 13,209 | 1 | 2d |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-25
Lifecycle StatusProduction (Last Updated: 5 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
関連部品
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 116A;D2Pak;PD 180W;VGS +/-16V
InfineonIRF1503SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20
STMicroelectronicsSTB80NF03L-04T4
N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET
説明
Infineon IRL7833STRRPBFの詳細は販売業者から提供されます。
Trans MOSFET N-CH 30V 150A 3-Pin(2+Tab) D2PAK T/R
MOSFET, 30V, 150A, 3.8 MOHM, 32 NC QG, LOGIC LEVEL, D2-PAK
Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.17 nF
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.3 V
Number of Elements1
Power Dissipation140 W
Rds On Max3.8 mΩ
Resistance3.8 MΩ
Rise Time50 ns
Turn-Off Delay Time21 ns
Turn-On Delay Time18 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm