Infineon IRL520NSPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;D2Pak;PD 48W;VGS +/-16V;-55d

Single N-Channel 100 V 180 mOhm 13.3 nC HEXFET® Power Mosfet - D2PAK

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

MOSFET, N, 100V, 10A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.1°C/W; Package / Case:D2-PAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:35A; SMD Marking:L520NS; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V