価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRL1404ZSPBF | 679 | 6h | |||||||||
| RS (Formerly Allied Electronics) | IRL1404ZSPBF | 0 | 400 | Bulk | 22h | |||||||
| Farnell | IRL1404ZSPBF | 0 | 1 | 5h | ||||||||
| Microchip USA | IRL1404ZSPBF | 208 | 600 | Bulk | 22h | |||||||
| Verical | IRL1404ZSPBF | 679 | 311 |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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InfineonIRF2804STRLPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20
説明
Infineon IRL1404ZSPBFの詳細は販売業者から提供されます。
Single N-Channel 40 V 3.1 mOhm 75 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 40V 200A 3-Pin(2+Tab) D2PAK
MOSFET, N CH., AUTOMOTIVE, 40V, 200A, 3.1 MOHM, 75 NC QG, D2-PAK, PB-FREE
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level
N-LogL 40V 75A 200W 0,0031R D²Pak
N-CH 40V 200A 3,1mOhm TO263 RoHSconf
Power Field-Effect Transistor, 120A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
CAP CER 100PF 50V C0G/NP0 RADIAL
MOSFET, N, 40V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:200mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:1404; Current Id Max:75A; Package / Case:D2-PAK; Power Dissipation Pd:200mW; Pulse Current Idm:790A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.7V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.1 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.08 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.1 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max3.1 mΩ
Recovery Time39 ns
Resistance3.1 MΩ
Rise Time180 ns
Threshold Voltage2.7 V
Turn-Off Delay Time30 ns
Turn-On Delay Time19 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm