サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-01-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
InfineonIRGP4069DPBF
600V Low VCEon Trench IGBT with Ultra-Fast Soft Recovery Diode in a TO-247 package
InfineonIRGP4069D-EPBF
600V Low VCEon Trench IGBT with Ultra-Fast Soft Recovery Diode in a TO-247 package
説明
Infineon IRGP4650DPBFの詳細は販売業者から提供されます。
Trans IGBT Chip N-CH 600V 76A 3-Pin(3+Tab) TO-247AC Tube
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel
IGBT, SINGLE, 600V, 76A, TO-247AC; DC Collector Current: 76A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 268W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of P
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current76 A
Element ConfigurationSingle
Fall Time54 ns
Max Collector Current76 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation268 W
Min Operating Temperature-55 °C
Package Quantity400
Power Dissipation268 W
Reverse Recovery Time120 ns
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time127 ns
Turn-On Delay Time46 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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