サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
Infineon IRG4RC10KDPBFの詳細は販売業者から提供されます。
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 9A 38W DPAK
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:9A; Collector Emitter Saturation Voltage, Vce(sat):2.62V; Power Dissipation, Pd:38W; Package/Case:D-PAK ;RoHS Compliant: Yes
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.62 V
Collector Emitter Voltage (VCEO)600 V
Current Rating9 A
Element ConfigurationSingle
Fall Time210 ns
Max Collector Current9 A
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation38 W
Reverse Recovery Time28 ns
Voltage Rating (DC)600 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm