Infineon IRFP4127PBF

Single N-Channel 200 V 21 mOhm 100 nC HEXFET® Power Mosfet - TO-247-3AC

200V Discrete HEXFET Power MOSFET in a Lead-Free TO-247AC Package, TUBE

200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Power Field-Effect Transistor, 75A I(D), 200V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

MOSFET, N-CH, 200V, 75A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.017ohm; Available until stocks are exhausted Alternative available

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 75 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 17 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 56 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 341