Infineon IRFP3415PBF

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-247AC;PD 200W;VGS +/-20V

Single N-Channel 150 V 0.042 Ohm 200 nC HEXFET® Power Mosfet - TO-247AC

IRFP3415PBF,MOSFET, 150V, 43A, 42 MOHM, 133.3 NC QG, TO-247A

150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

N Channel Mosfet, 150V, 43A, To-247Ac; Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:43A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 43 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 42 / Gate-Source Voltage V = 20 / Fall Time ns = 69 / Rise Time ns = 55 / Turn-OFF Delay Time ns = 71 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200