Infineon IRFP3077PBF

IRFP3077PBF N-channel MOSFET Transistor, 160 A, 75 V, 3-Pin TO-247AC

75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Power Field-Effect Transistor, 120A I(D), 75V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:340W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200A; Package / Case:TO-247AC; Power Dissipation Pd:340W; Pulse Current Idm:850A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Mosfet, N-Ch, 75V, 120A, 175Deg C, 340W; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFP3077PBF

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.