サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
関連部品
International RectifierIRF7NJZ44V
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
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Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
InfineonIRL5NJ7413
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
説明
Infineon IRFN240の詳細は販売業者から提供されます。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package, SMD-1-3
Infineon SCT
Trans MOSFET N-CH 200V 18A 3-Pin SMD-1
13.9 A 200 V 0.25 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
HEXFET, Hi-Rel 200V, 18A, 0.180 ohm
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Body MaterialCeramic
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance250 mΩ
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance200 mΩ
Power Dissipation125 W