サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-08-25
Lifecycle StatusObsolete (Last Updated: 5 months ago)
関連部品
説明
Infineon IRFIZ24EPBFの詳細は販売業者から提供されます。
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
MOSFET, 60V, 14A, 71 MOHM, 13.3 NC QG, TO-220 FULLPACK
Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) TO-220 Full-Pak
Power Field-Effect Transistor, 14A I(D), 60V, 0.071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):71mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK ;RoHS Compliant: Yes
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance71 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Operating Temperature175 °C
Max Power Dissipation29 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation29 W
Rds On Max71 mΩ
Rise Time34 ns
Schedule B8541290080
Turn-Off Delay Time19 ns
Voltage Rating (DC)60 V