価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFH7936TRPBF | 4,530 | 7h | |||||||||
| RS (Formerly Allied Electronics) | IRFH7936TRPBF | 0 | 4K | Bulk | 23h | |||||||
| Microchip USA | IRFH7936TRPBF | 2,544 | 3500 | Tray | 1h | |||||||
| Win Source | WS-IRFH7936TRPBF | 6,103 | 115 | 8h | ||||||||
| Worldway Electronics | IRFH7936TRPBF | 18,121 | 7 | Bulk | 7h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-05
Lifecycle StatusProduction (Last Updated: 3 months ago)
関連部品
InfineonIRFHM8329TRPBF
Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
InfineonBSC886N03LSGATMA1
Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 13 A, TDSON-8, BSC886N03LSGATMA1
説明
Infineon IRFH7936TRPBFの詳細は販売業者から提供されます。
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
Infineon SCT
Power Field-Effect Transistor, 76A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET N CH 30V 20A PQFN; Transistor Type:MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:30V; Cont Current Id:20A; On State Resistance:4.1mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:PQFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Current Id:20A; Max Voltage Vds:30V; Max Voltage Vgs:20V; Power Dissipation:3.1W; Rds Measurement Voltage:10V; Transistor Case Style:PQFN
Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.36 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.8 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.1 W
Rds On Max4.8 mΩ
Rise Time12 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time17 ns
Dimensions
Height1.1684 mm
Length5.2324 mm
Width6.1468 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
準拠ステートメント