サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-07
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
関連部品
説明
Infineon IRFH7911TR2PBFの詳細は販売業者から提供されます。
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package
Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
MOSFET, DUAL N-CHANNEL, 30V, POL, PQFN5X6
Power Field-Effect Transistor, 13A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET [IR] IRFH7911TR2PBF MOSFET
MOSFET,NN CH,30V,13A,28A,PQFN56; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Transistor Case Style:PQFN; No. of Pins:15; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:2.4W
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
MountSurface Mount
Number of Terminals6
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.06 nF
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-50 °C
Nominal Vgs2.35 V
Number of Elements1
Power Dissipation3.4 W
Rds On Max8.6 mΩ
Recovery Time20 ns
Rise Time35 ns
Threshold Voltage2.35 V
Turn-Off Delay Time28 ns
Dimensions
Height939.8 µm
Length5.9944 mm
Width5 mm