価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5020TR2PBF | 0 | 400 | Bulk | 13h | |||||||
| Avnet | IRFH5020TR2PBF | 0 | 400 | 5d | ||||||||
| Farnell | IRFH5020TR2PBF | 0 | 1 | Cut Tape | 22h | |||||||
| Microchip USA | IRFH5020TR2PBF | 110 | 150 | Tray | 7d | |||||||
| Component Stockers USA | IRFH5020TR2PBF | 507 | >1wk |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
関連部品
InfineonIRFH5015TR2PBF
MOSFET N-CH 150V 10A 8VQFN / N-Channel 150 V 10A (Ta), 56A (Tc) Surface Mount 8-PQFN (5x6)
説明
Infineon IRFH5020TR2PBFの詳細は販売業者から提供されます。
200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, N-Channel, 200V, 41A, 59 mOhm, 36 nC Qg, PQFN
Trans MOSFET N-CH 200V 5.1A 8-Pin QFN T/R
MOSFET, N CH, 200V, 41A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:200V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:8.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Power Dissipation Pd:8.3W; Voltage Vgs Max:20V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)5.1 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.29 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation8.3 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.6 W
Rds On Max55 mΩ
Recovery Time69 ns
Resistance55 MΩ
Rise Time7.7 ns
Threshold Voltage5 V
Turn-Off Delay Time21 ns
Turn-On Delay Time9.3 ns
Dimensions
Height1.05 mm
Length5.9944 mm
Width5 mm