Infineon IRFB3004PBF

Single N-Channel 40 V 1.75 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

Power MOSFET, HEXFET, N Channel, 40 V, 195 A, 0.00175 ohm, TO-220AB, Through Hole

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Trans MOSFET N-CH 40V 340A 3-Pin(3+Tab) TO-220 Full-Pak Tube

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 380 W

HEXFET Power MOSFET Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET N CH, 40V 340A TO220AB; Transistor Polarity:N Channel; On State Resistance:1.75mohm; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Base Number:3004; Case Style:TO-220AB; Cont Current Id:195A; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:40V; Typ Voltage Vgs th:4V; Voltage Vgs Rds on Measurement:10V; Driver IC Case Style:TO-220AB

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.