Infineon IRF9389TRPBFの詳細は販売業者から提供されます。
MOSFET, 30V, N+P, 27 m and -64 m , 6.8A and -4.6A, SO-8, TAPE & REEL
2W 20V 2.3V@ 10¦ÌA 14nC@ 10V 2N+2P 30V 27m¦¸@ 6.8A,10V 6.8A,4.6A 398pF@15V SOIC-8 1.75mm
Trans MOSFET N/P-CH 30V 6.8A/4.6A 8-Pin SOIC N T/R
Dual N/P-Channel 30 V 27/64 mOhm 6.8/8.1 nC HEXFET® Power Mosfet - SOIC-8
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 6.8A I(D), 30V, 0.027ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL N & P-CH, 30V, 6.8A, SOIC-8; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 30V; On Resistanc; Available until stocks are exhausted Alternative available
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.