Infineon IRF8010SPBF

Single N-Channel 100 V 260 W 81 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;D2Pak;PD 260W;VGS +/-20

100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS

Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK

SMPS MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

N CHANNEL MOSFET, 100V, 80A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15mohm; Package / Case:D2-PAK; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V