Infineon IRF7809AVPBF

IRF7809AVPBF: 30 V 13.3 A 9 mOhm SMT Hexfet Power Mosfet - SOIC-8

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.3A;SO-8;PD 2.5W;VGS +/-12V

Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC

HEXFET POWER MOSFET Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13.3A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:F7809; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V