サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
関連部品
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1.6W(Ta) 20V 3V@ 250¦ÌA 12.9nC@ 10 V 1N 30V 24m¦¸@ 7A,10V 6.4A 608pF@15V SOIC-8
説明
Infineon IRF7807VD2TRPBFの詳細は販売業者から提供されます。
Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode | MOSFET N-CH 30V 8.3A 8-SOIC
Power Field-Effect Transistor, 8.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET COPACK WITH SCHOTTKY, 30V, 8.3A, 25 MOHM, 9.5 NC QG, SO-8
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.3A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)8.3 A
Current Rating8.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time2.2 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max25 mΩ
Rise Time1.2 ns
Schedule B8541290080
Turn-Off Delay Time1.1 ns
Turn-On Delay Time6.3 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm