Infineon IRF7805PBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.2Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-12V

Single N-Channel 30 V 11 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8

2.5W(Ta) 12V 3V@ 250¦ÌA 31nC@ 5 V 1N 30V 11m¦¸@ 7A,4.5V 13A SOIC-8 4.9mm*3.9mm*1.75mm

Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7805PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:4.5V