Infineon IRF7241PBF

MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 25Milliohms;ID -6.2A;SO-8;PD 2.5W;VGS +/-2

Single P-Channel 40 V 41 mOhm 80 nC HEXFET® Power Mosfet - SOIC-8

MOSFET P-CH 40V 6.2A 8SO P-Channel 40 V 6.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

2.5W(Ta) 20V 3V@250µA 80nC@10V P-Ch MOSFET 40V 41mΩ@6.2A,10V 6.2A 3.22nF@25V SOIC-8 SMD 1.75mm H

Trans MOSFET P-CH 40V 6.2A 8-Pin SOIC Tube

-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Small Signal Field-Effect Transistor, 6.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.2A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:25A; SMD Marking:F7241; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:-40V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.