Infineon IRF7105PBF

Transistor MOSFET N P Channel 25 Volt 3.5 Amp-2.3 Amp 8 Pin SOIC

Dual N/P-Channel 25 V 0.16/0.4 Ohm 27/25 nC HEXFET® Power Mosfet - SOIC-8

Trans MOSFET N/P-CH 25V 3.5A/2.3A 8-Pin SOIC

25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:25V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel 2:3.5A; Cont Current Id P Channel:2.3A; Current Id Max:3.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:100mohm; On State Resistance P Channel Max:250mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Pulse Current Idm N Channel 2:14A; Pulse Current Idm P Channel:10A; Row Pitch:6.3mm; SMD Marking:F7105; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:3V