サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-02-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-25
LTD Date2013-02-25
説明
Infineon IRF6611TR1の詳細は販売業者から提供されます。
Power Field-Effect Transistor, 27A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 32A DIRECTFET
MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:4860pF; Current Id Max:22A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:3.9W; Power Dissipation Pd:3.9W; Pulse Current Idm:220A; Reverse Recovery Time trr Typ:24ns; SMD Marking:6611; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V
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技術仕様
Physical
MountSurface Mount
Number of Pins5
Number of Terminals2
Technical
Continuous Drain Current (ID)27 A
Current Rating27 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time6.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.86 nF
Max Operating Temperature150 °C
Max Power Dissipation89 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs2.25 V
Number of Elements1
PackagingCut Tape
Power Dissipation3.9 W
Rds On Max2.6 mΩ
Reverse Recovery Time24 ns
Rise Time57 ns
TerminationSMD/SMT
Threshold Voltage2.25 V
Turn-Off Delay Time24 ns
Voltage Rating (DC)30 V