サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-03
Lifecycle StatusObsolete (Last Updated: 5 months ago)
説明
Infineon IRF6100PBFの詳細は販売業者から提供されます。
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package
Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-5.1A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:4 Lead FlipFET ;RoHS Compliant: Yes
MOSFET, P, FLIPFET; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:5.1A; On State Resistance:65mohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-1.2V; Case Style:FlipFET; Termination Type:SMD; Current, Idm Pulse:35A; Power Dissipation Pd:2.2W; SMD Marking:IRF6100; Voltage, Vds Max:20V
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- INFINEN
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- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
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- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)5.1 A
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage-20 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.23 nF
Max Operating Temperature150 °C
Max Power Dissipation2.2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.2 V
Number of Elements1
Power Dissipation2.2 W
Rds On Max65 mΩ
TerminationSMD/SMT