Infineon IRF340

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

N CH MOSFET, 400V, 10A, TO-204AA; Transi; N CH MOSFET, 400V, 10A, TO-204AA; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:400V; On Resistance Rds(on):550mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

MOSFET, N, TO-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:5.7mJ; Current Iar:10A; Current, Idm Pulse:40A; Fixing Centres:30mm; Lead Spacing:11mm; No. of Pins:2; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V; Weight:0.012kg