Infineon IQE006NE2LM5CGSCATMA1

Mosfet, N-Ch, 310A, Tfn Rohs Compliant: Yes |Infineon Technologies IQE006NE2LM5CGSCATMA1

Power MOSFET, N Channel, 25 V, 310 A, 0.58 Milliohms, WHTFN, 9 Pins, Surface Mount

OptiMOS low-voltage power MOSFET 25 V in PQFN 3.3x3.3

2.1W(Ta),89W(Tc) 16V 2V@ 250¦ÌA 82nC@ 10 V 1N 25V 580¦Ì¦¸@ 20A,10V 5.453nF@12V

Power Field-Effect Transistor, 310A I(D), 25V, 0.00075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

OPTIMOS LOWVOLTAGE POWER MOSFET

Infineon IQE006NE2LM5CGSCATMA1

Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOS™ 25 V PQFN 3.3x3.3 Source-Down DSC: IQE006NE2LM5CGSC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management.Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization).