サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-09-26
Lifecycle StatusProduction (Last Updated: 1 month ago)
説明
Infineon IPW65R190CFDFKSA2の詳細は販売業者から提供されます。
Mosfet, N-Ch, 650V, 17.5A, To-247-3; |Infineon Technologies IPW65R190CFDFKSA2
N-Channel 650 V 17.5 A 151 W 190 mOhm Through Hole Mosfet - PG-TO247-3
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
151W(Tc) 20V 4.5V@ 700µA 68nC@ 10 V 1individualNChannel 650V 190mΩ@ 7.3A,10V 17.5A 1.85nF@100V TO-247-3 Through hole mounting
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
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- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)17.5 A
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vds)650 V
Max Operating Temperature150 °C
Max Power Dissipation151 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance190 mΩ
Package Quantity240
Power Dissipation151 W