サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-09-04
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
説明
Infineon IPW65R080CFDFKSA2の詳細は販売業者から提供されます。
Mosfet, N-Ch, 650V, 43.3A, To-247; |Infineon Technologies IPW65R080CFDFKSA2
N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3
MOSFET 20V 4.5V@1.8mA 167nC@10V 1-Ch N-Channel 650V 80mΩ@17.6A,10V 43.3A 5.03nF@100V TO-247-3 TH
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO247-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-247
Number of Terminals3
Technical
Continuous Drain Current (ID)43.3 A
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vds)650 V
Max Operating Temperature150 °C
Max Power Dissipation391 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance80 mΩ
Package Quantity240
Power Dissipation391 W