Infineon IPT60R180CM8XTMA1

Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET

119W(Tc) 4.7V@ 140µA 17nC@ 10 V 1individualNChannel 600V 180mΩ@ 5.6A,10V 18A 743pF@400V SMD mount

MOSFET, N-CH, 600V, 18A, HSOF;

The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.