Infineon IPP057N08N3GXKSA1

MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Dr

Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220

INFINEON - IPP057N08N3GXKSA1 - MOSFET, N CH, 80A, 80V, PG-TO220-3

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Power Field-Effect Transistor, 80A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Current Id Max:80A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 5.4 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150