Infineon IPP037N08N3GXKSA1の詳細は販売業者から提供されます。
Power MOSFET, N Channel, 80 V, 100 A, 0.0028 ohm, TO-220, Through Hole
TRANSISTOR, OPTIMOS 3 POWER, N-CHANNEL, NORMAL LEVEL, 80V, 100A, TO220
Trans MOSFET N-CH 80V 100A 3-Pin TO-220 Tube
INFINEON - IPP037N08N3 G. - MOSFET, N CH, 100A, 80V, PG-TO220-3
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Power Field-Effect Transistor, 100A I(D), 80V, 0.00375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V; Power Dissipation:214W; No. of Pins:3Pins RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 100 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 3.75 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 79 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 23 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 214