サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-29
Lifecycle StatusObsolete (Last Updated: 5 months ago)
関連部品
InfineonIPD050N03LGATMA1
Power MOSFET, N Channel, 30 V, 50 A, 0.0042 ohm, TO-252 (DPAK), Surface Mount
InfineonIPD060N03LGATMA1
N-Channel 30 V 50 A 6 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
説明
Infineon IPF05N03LAGの詳細は販売業者から提供されます。
Trans MOSFET N-CH 25V 50A 4-Pin(3+Tab) TO-252
Compliant Surface Mount 4.8 ns Lead Free Tape & Reel (TR) 7.8 ns 5.1 mΩ TO-252-3
94W(Tc) 20V 2V@ 50¦ÌA 25nC@ 5 V 1N 25V 5.1m¦¸@ 30A,10V 50A 3.11nF@15V TO-252 6.5mm*6.22mm*2.28mm
Power Field-Effect Transistor, 50A I(D), 25V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)50 A
Current Rating50 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time4.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.11 nF
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation94 W
Rds On Max5.1 mΩ
Rise Time7.8 ns
Turn-Off Delay Time31 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)25 V