Infineon IPDD60R180CM8XTMA1

Power MOSFET, N Channel, 600 V, 21 A, 0.18 Ohm, HDSOP, 10 Pins, Surface Mount

Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET

Trans MOSFET N-CH 600V 21A 10-Pin HDSOP EP T/R

Infineon IPDD60R180CM8XTMA1 MOSFET

The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.