Infineon IPB60R380C6ATMA1

INFINEON - IPB60R380C6ATMA1 - MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V

Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) D2PAK T/R

Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS

MOSFET,N CH,600V,10.6A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3