Infineon IPB60R070CFD7ATMA1

Power Transistor MOSFET N-Channel Enhancement 600V 31A 3-Pin D2PAK T/R

Trans MOSFET N-CH 600V 31A 3-Pin(2+Tab) D2PAK T/R

Mosfet, N-Ch, 600V, 31A, 150Deg C, 156W Rohs Compliant: Yes |Infineon Technologies IPB60R070CFD7ATMA1

Infineon NMOS, Vds=600 V, 31 A, D2PAK £¨TO-263£©, , 3

Power Field-Effect Transistor, 31A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

4.7 mm 156 W 1 26 ns 99 ns 150 °C -55 °C 57 mΩ

MOSFET N-CH 650V 31A TO263-3-2

Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R070CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.