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製造元 Infineon IPA90R340C3XKSA2 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 EE Concierge | シンボルフットプリント |
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サプライチェーン
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-29
Lifecycle StatusNRND (Last Updated: 1 month ago)
LTB Date2020-12-31
LTD Date2021-06-30
関連部品
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N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP package
STMicroelectronicsSTF15N80K5
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP package
InfineonIPW65R190CFDAFKSA1
MOSFET N-CH 650V 17.5A TO247-3 / N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO247-3
説明
Infineon IPA90R340C3XKSA2の詳細は販売業者から提供されます。
MOSFET N-CH 900V 15A TO220-FP / N-Channel 900 V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP
Power Transistor MOSFET N-Channel Enhancement 900V 15A 3-Pin TO-220FP
Avnet Japan
Power MOSFET, N Channel, 900 V, 15 A, 0.28 ohm, TO-220FP, Through Hole
35W(Tc) 20V 3.5V@1mA 94nC@ 10 V 1N 900V 340m¦¸@ 9.2A,10V 15A 2.4nF@100V TO-220-3
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.9pF 50volts C0G +/-0.5pF
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N Channel, 900V, 15A, To-220-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon IPA90R340C3XKSA1
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:900V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:15A; Package / Case:TO-220; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)900 V
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Max Dual Supply Voltage900 V
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance340 mΩ
Package Quantity500
Power Dissipation35 W
Rise Time20 ns
Schedule B8541290080
Turn-Off Delay Time400 ns
Turn-On Delay Time70 ns
コンプライアンス
環境分類
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント