Infineon IMW65R083M1HXKSA1

Transistor Silicon Carbide MOSFET N-CH 650V 24A 3-Pin TO-247 Tube

Power Field-Effect Transistor, 24A I(D), 650V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Sic Mosfet, N-Ch, 650V, 24A, To-247-3; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; No. Of Pins:3Pins; Rds(On) Test Voltage:18V; Power Dissipation:104W Rohs Compliant: Yes |Infineon Technologies IMW65R083M1HXKSA1

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R083M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.