Infineon IMW120R030M1HXKSA1

Silicon Carbide MOSFET, Single, N Channel, 56 A, 1.2 kV, 0.03 ohm, TO-247

Power Field-Effect Transistor, 56A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

MOSFET, N-CH, 1.2KV, 56A, 175DEG C, 227W; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs

The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.