Infineon IMBG65R107M1HXTMA1

Silicon Carbide MOSFET, Single, N Channel, 24 A, 650 V, 0.107 ohm, TO-263

Power Field-Effect Transistor, 24A I(D), 650V, 0.141ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263

Sic Mosfet, N-Ch, 650V, 24A, To-263-7; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; No. Of Pins:7Pins; Rds(On) Test Voltage:18V; Power Dissipation:110W Rohs Compliant: Yes |Infineon Technologies IMBG65R107M1HXTMA1

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R107M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in mid power applications. It is optimized to enable max system performance, compactness and reliability.