Infineon IKW40N65WR5XKSA1

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

650 V, 40 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Trans IGBT Chip N-CH 650V 80A 230W 3-Pin(3+Tab) TO-247 Tube

IGBT Trench 650 V 80 A 230 W Through Hole PG-TO247-3

230W 1.4V 650V 80mA TO-247 , 15.94mm*502cm*20.95mm

80A 650V TO-247-3 IGBT Transistors / Modules ROHS

Infineon IKW40N65WR5XKSA1 IGBT 650 V PG-TO247-3

IKW40N65 - 650V, 40A IGBT WITH A

Igbt, Single, 650V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.4V; Power Dissipation:230W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKW40N65WR5XKSA1

High speed 650 V, 40 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in TO-247 package. The Reverse Conducting TRENCHSTOP™ 5 WR5 IGBT features an optimized diode that is adequately rated for the target application. WR5 is recommended for use in the PFC stage in air conditioning, DC/DC in welding, AC/DC in UPS and MPPT in solar string inverters. The excellent price/performance ratio of WR5 IGBT allows access to the high-performance technology also for cost sensitive customers.