IGBT+ DIODE,600V,4A,TO251; Transistor Type:IGBT; DC Collector Current:4A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:75W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:75W