サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-06-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-02-28
LTD Date2013-08-31
関連部品
InfineonBSL214N L6327
MOSFET, N-CH, DUA,L 20V, 1.5A, 6TSOP; Transistor Polarity:Dual N Channel; Contin
InfineonBSL207NL6327
500mW 12V 1.2V@ 11¦ÌA 2.1nC@ 4.5V 2N 20V 70m¦¸@ 2.1A,4.5V 2.1A 419pF@10V SOP 3mm*1.5mm*1.1mm
説明
Infineon BSL215PL6327の詳細は販売業者から提供されます。
P-CHANNEL MOSFET / Mosfet Array 2 P-Channel (Dual) 20V 1.5A 500mW Surface Mount PG-TSOP6-6
Trans MOSFET 2P-CH -20V -1.5A 6-pin TSOP T/R 3k
1500 mA 20 V 2 CHANNEL P-CHANNEL Si SMALL SIGNAL MOSFET
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)1.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time9.7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance346 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
Power Dissipation500 mW
Rds On Max150 mΩ
Rise Time9.7 ns
Turn-Off Delay Time14.5 ns
Turn-On Delay Time6.7 ns