サプライチェーン
Country of OriginUSA
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2013-07-31
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
関連部品
GeneSiC SemiconductorMBRT30060R
60V 300A Three Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
GeneSiC SemiconductorMBR12030CTR
30V 120A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
説明
GeneSiC Semiconductor MBR30035CTRの詳細は販売業者から提供されます。
35V 300A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 35V V(RRM), Silicon
DIODE, RECTIF, 35V, 300A, TWIN TOWER
Schottky Diodes & Rectifiers 35V 300A Schottky Recovery
DIODE MOD SCHOTT 35V 150A 2TOWER
SCHOTTKY RECTIFIER, 35V, 300A, Twin Tower; Repetitive Reverse Voltage Vrrm Max:35V; Forward Current If(AV):150A; Forward Voltage VF Max:650mV; Diode Module Configuration:Single; Product Range:-; Diode Case Style:Module RoHS Compliant: Yes
メーカーの別名
GeneSiC Semiconductorは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 GeneSiC Semiconductor は以下の名前でも知られているかもしれません：
- GENESIC
- GENESIC SEMI
- GENESIC SEMICONDUCTOR INC
技術仕様
Physical
Case/PackageModule
MountChassis Mount
Number of Pins2
Number of Terminals2
Technical
Average Rectified Current300 A
Element ConfigurationCommon Anode
Forward Current150 A
Forward Voltage650 mV
Max Forward Surge Current (Ifsm)2.5 kA
Max Operating Temperature175 °C
Max Output Current150 A
Max Repetitive Reverse Voltage (Vrrm)35 V
Max Reverse Leakage Current1 µA
Max Reverse Voltage (DC)35 V
Max Surge Current2.5 kA
Min Operating Temperature-40 °C
Number of Elements2
Peak Reverse Current8 mA
Reverse Standoff Voltage35 V